BTS117TCBUMA1: Technical Specifications and Functional Analysis
The BTS117TCBUMA1 represents a highly integrated, intelligent high-side power switch engineered within an advanced SO-8 package. Designed to meet the rigorous demands of automotive and industrial applications, this device combines robust power handling with sophisticated diagnostic and protection features, providing a reliable interface between a low-power microcontroller and high-current loads.
Technical Specifications
The core of the BTS117TCBUMA1 is built upon a vertical N-channel power MOSFET with a very low typical on-state resistance (RDS(on)) of just 6.5 mΩ. This exceptionally low resistance is pivotal for minimizing conduction losses and improving overall system efficiency, especially in high-current scenarios. The device is specified for a continuous output current (IL) of up to 11 A, with a maximum operating voltage of 40 V, making it suitable for standard 12 V and 24 V DC systems.
A key feature is its logic-level compatible input controlled via a 5 V TTL/CMOS signal, allowing for direct interfacing with microcontrollers without the need for additional level-shifting circuitry. The chip incorporates comprehensive protection mechanisms, including overload and active current limiting, overtemperature shutdown with restart, and overvoltage protection (including load-dump resilience). Furthermore, it offers detailed diagnostic feedback through a dedicated status pin, which can signal open-load conditions (both pre- and post-switch-on) and overtemperature pre-warning.
Functional Analysis
The functionality of the BTS117TCBUMA1 can be divided into three primary domains: control, switching, and diagnostics.
1. Control and Driving: The integrated charge pump generates the necessary voltage to drive the N-channel MOSFET's gate, ensuring full enhancement from a single 5 V supply. This allows for efficient switching of inductive, resistive, and capacitive loads such as solenoids, valves, lamps, and motors.
2. Power Switching: The core switching element handles the main current path. The ultra-low RDS(on) ensures that during the "on" state, the voltage drop across the switch and the resultant power dissipation (I²R loss) are kept to an absolute minimum. This directly translates to reduced thermal stress and the potential for a smaller heatsink or none at all in less demanding applications.
3. Protection and Diagnostics: This is where the device's "intelligence" shines. The current limiting circuit actively clamps the output current during a short circuit or overload event, protecting both the switch and the load. The overtemperature circuit monitors the silicon die's junction temperature. If a critical threshold is exceeded, it disables the output and reactivates it only after the device has cooled down, implementing an autonomous fault recovery cycle. The status pin provides a digital signal to the host microcontroller, enabling predictive maintenance and system-level diagnostics by reporting fault conditions in real-time.
The BTS117TCBUMA1 stands out as a superior solution for robust electronic switching. Its combination of extremely low power loss, high integration of protective features, and detailed diagnostic capabilities makes it an ICGOODFIND for engineers designing reliable systems in harsh electrical environments, particularly in the automotive sector.
Keywords:
1. High-Side Switch
2. Low RDS(on)
3. Overcurrent Protection
4. Diagnostic Feedback
5. Automotive Grade
