PXE1410CDM-G003: Infineon's High-Performance CoolMOS™ Power MOSFET
In the relentless pursuit of higher efficiency and power density in modern electronics, the power MOSFET stands as a critical component. Infineon Technologies, a global leader in semiconductor solutions, addresses this challenge head-on with its PXE1410CDM-G003, a standout member of the renowned CoolMOS™ P7 family. This device is engineered to set new benchmarks in performance for a wide array of power conversion applications.
The core innovation of the PXE1410CDM-G003 lies in its superjunction (SJ) technology. This advanced design enables a remarkable reduction in on-state resistance (RDS(on)) for a given silicon area. The result is a device that boasts exceptionally low switching and conduction losses, which directly translates into higher overall system efficiency. Whether it's in server and telecom power supplies, industrial motor drives, or renewable energy systems, this MOSFET ensures that more power is delivered to the load with less energy wasted as heat.
A key feature of this component is its optimized for hard-switching topologies. In applications like power factor correction (PFC) and LLC resonant converters, where switching speeds are critical, the PXE1410CDM-G003 demonstrates superior performance. Its low gate charge (Qg) and small reverse recovery charge (Qrr) contribute to faster switching speeds, reduced electromagnetic interference (EMI), and lower stress on surrounding components. This allows designers to push switching frequencies higher, which in turn enables the use of smaller passive elements like inductors and transformers, leading to more compact and lighter end products.
Furthermore, Infineon has placed a strong emphasis on robustness and reliability. The device offers a high avalanche ruggedness and is qualified according to the stringent JEDEC standard for 100% repetitive avalanche testing. This ensures unwavering performance and long-term durability even in the most demanding operating conditions, providing system designers with critical peace of mind.
The PXE1410CDM-G003 is also designed with ease of use in mind. It is offered in a standard, low-inductance D2PAK-7L (TO-263-7) surface-mount package, facilitating both automated assembly and effective thermal management by providing an efficient path for heat dissipation away from the die.
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In summary, the Infineon PXE1410CDM-G003 is more than just a MOSFET; it is a highly optimized solution for next-generation power designs. Its blend of ultra-low losses, high switching speed, and proven robustness makes it an indispensable component for engineers striving to achieve peak efficiency and power density. By leveraging this advanced CoolMOS™ technology, designers can create systems that are not only more powerful but also cooler, smaller, and more reliable.
Keywords:
CoolMOS™ P7, Power Efficiency, Superjunction Technology, Hard-Switching Topologies, Low RDS(on)
