Infineon IPC100N04S5L1R5ATMA1: A High-Performance 40V OptiMOS 5 Power MOSFET

The relentless pursuit of higher efficiency and power density in modern electronics demands semiconductor components that deliver exceptional performance. Addressing this need, the Infineon IPC100N04S5L1R5ATMA1 stands out as a premier 40V Power MOSFET built on the advanced OptiMOS™ 5 technology platform. This device is engineered to set new benchmarks in power conversion for a wide array of applications, from automotive systems to server power supplies and industrial motor drives.

A key metric for any power MOSFET is its on-state resistance, or RDS(on). The IPC100N04S5L1R5ATMA1 excels in this regard, offering an ultra-low typical RDS(on) of just 1.5 mΩ. This remarkably low resistance is the cornerstone of its high efficiency. By minimizing conductive losses during operation, the device dissipates less power as heat, leading to cooler running systems. This not only improves overall energy efficiency but also reduces the burden on thermal management solutions, allowing for smaller heatsinks and more compact product designs.

Beyond low losses, the OptiMOS 5 technology provides excellent switching performance. The device features optimized gate charge (Qg) and low figures of merit, which translate to reduced switching losses at high frequencies. This capability is crucial for designers aiming to increase the switching frequency of their power supplies, which in turn allows for the use of smaller passive components like inductors and capacitors. The result is a significant boost in power density, enabling the creation of more powerful yet smaller end products.

The robustness and reliability of this MOSFET are paramount. It offers a high maximum current rating of 100A, ensuring it can handle significant power levels. Furthermore, it is housed in a SuperSO8 package, which provides a low profile for space-constrained applications while also offering superior thermal performance compared to standard SO-8 packages. Its qualifications make it an ideal choice for demanding environments, particularly in the automotive sector.

In summary, the Infineon IPC100N04S5L1R5ATMA1 is a top-tier component that combines ultra-low conduction losses, fast switching speed, and high current handling in a robust package.

ICGOOODFIND: This MOSFET is an optimal choice for engineers designing high-efficiency, high-density power systems where minimizing energy loss and maximizing reliability are critical.

Keywords: OptiMOS 5, Ultra-low RDS(on), High Power Density, SuperSO8, Automotive Grade.